Silicon Crystal Growth and Wafer Technologies
نویسندگان
چکیده
منابع مشابه
Defect control in silicon crystal growth and wafer processing
Accurate control of the defectivity of silicon crystals and wafers is a subject of immense importance to both the silicon and IC industries. Exploding costs of wafer development and production as well as the processing of 300mm wafers means that predictive defect engineering is now, more than ever a requirement for both industries. There is little scope any more for iterative approaches to thes...
متن کاملDefect Engineering During Czochralski Crystal Growth and Silicon Wafer Manufacturing
Single crystal silicon has played the fundamental role in electronic industry since the second half of the 20th century and still remains the most widely used material. Electronic devices and integrated circuits are fabricated on single-crystal silicon wafers which are produced from silicon crystals grown primarily by the Czochralski (CZ) technique. Various defects are formed in the growing cry...
متن کاملWafer-bonded single-crystal silicon slot waveguides and ring resonators
We fabricated horizontal Si slot waveguides with a 25 nm SiO2 slot layer by bonding thin Si-on-insulator wafers. After removing the Si substrate and buried oxide from one side of the bonded structure, grating-coupled waveguides and ring resonators were partially etched into the Si /SiO2 /Si device layers. The gratings exhibit efficiencies of up to 23% at 1550 nm and the ring resonators were mea...
متن کاملHydrophobic silicon wafer bonding
Wafers prepared by an HF dip without a subsequent water rinse were bonded at room temperature and annealed at temperatures up to 1100 “C. Based on substantial differences between bonded hydrophilic and hydrophobic Si wafer pairs in the changes of the interface energy with respect to temperature, secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM), we suggest that h...
متن کاملNumerical Modeling of Czochralski Silicon Crystal Growth
Modeling of heat transfer is presented for the entire Czochralski Si-growth furnace. The axisymmetric steady-state approach with moving computational grids is used. Melt turbulent flow, inert gas flow, heat transfer in solid parts, and radiative heat transfer in the system are considered. The Reynolds-averaged Navier-Stokes equations written with the Boussinesq approximation and the energy equa...
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ژورنال
عنوان ژورنال: Proceedings of the IEEE
سال: 2012
ISSN: 0018-9219,1558-2256
DOI: 10.1109/jproc.2012.2189786